-40%
2A509A Military Si Switching p-i-n Diode, 150GHz Lot of 2pcs
€ 6.38
- Description
- Size Guide
Description
Russian Military Silicon Switching p-i-n Diode2A509A
The working element is a diode structure type semiconductor p-i-n. Designed for use in switching devices, modulators, phase shifters and attenuators centimeter and decimeter wavelength ranges.
Are intended for application in switching microwave devices, attenuators. KA or 2A means silicon diode
s
Metal-ceramic body, Gold plated
New, Old stock
Electric parameters:
Frequency range 150GHz
Collected charge 25nC
Series Resistance 1.5 Ohm
Breakdown voltage 200V
Capacity 0.9-1.2pF
Reverse voltage, DC 150V
Forward current, DC 150mA
Disspation Power 2W
Please allow for the following shipping times:
EU countries: 5-8 business days, on rare occasions a few days more
USA: 10-15 business days, on rare occasions more
South East Asia (Japan, Singapore, S. Korea, Hong Kong, Taiwan etc) 10 business days, on rare occasions more
India, China, Russia, Kazakhstan, Pakistan, Indonesia, Malaysia, Thailand, Australia, South Africa etc: at least 15 business days, but frequently around 25 business days
Please note that shipping cost is calculated at average. If you have any objections please contact me for a specific quotation.
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