3I101B ◊☆10pcs☆(3И101Б) Ga-As Tunnel Diodes

Description

1LO
Т
=10 PIECES
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Arsenide-gallium tunnel diodes. Designed to work in amplifiers. Issued in
metal ceramic housing with tape leads.
Peak current:
3I101A, 3I101B
 at 298 K - from 0.75 to 1.25 mA
 at 373 K - from 0.5 to 1.25 mA
 at 213 K - from 0.5 to 1.5 mA
AI101A, AI101B
 at 298 K - from 0.75 to 1.25 mA
 at 358 K - from 0.5 to 1.25 mA
 at 213 K - from 0.5 to 1.5 mA
Ratio of peak current to trough current, not less than:
3I101A, 3I101B, AI101A, AI101B
at 298 K - 5
3I101V, 3I101G, 3I101D, 3I101E, 3I101Zh, 3I101I, AI101V, AI101D, AI101E, AI101I at 298 K - 6
3I101A, 3I101B
 at 373 K - 3
 at 213 K - 4
3I101V, 3I101G, 3I101D, 3I101E, 3I101ZH, 3I101I
 at 373 K - 4
 at 213 K - 5
Peak voltage is not more than:
 3I101A, 3I101B, 3I101V, 3I101G, 3I101D - 0.16 V
 3I101Ye, 3I101Zh, 3I101I - 0.18 V
 AI101A, AI101B, AI101V, AI101D - 0.16 V
 AI101Ye, AI101I - 0.18 V
Resistance of losses at τи ≤ 15 microsec, porosity not less than 100, no more:
 3I101A at Iobr, and = 30 mA - 24 Ohm
 AI101A at Iobr, and = 30 mA - 18 Ohm
 3I101B at Iobr, and = 30 mA - 22 Ohm
 AI101B at Iobr, and = 30 mA - 16 Ohm
 3I101V at Iobr, and = 50 mA - 18 Ohm
 AI101V at Iobr, and = 40 mA - 16 Ohm
 3I101G at Iobr, and = 50 mA - 16 Ohm
 AI101D at Iobr, and = 40 mA - 14 Ohm
 3I101D at Iobr, and = 50 mA - 16 Ohm
 AI101Ye at Iobr, and = 80 mA - 8 Ohm
 3I101Ye at Iobr, and = 100 mA - 10 Ohm
 AI101I at Iobr, and = 80 mA - 7 Ohm
 3I101Zh at Iobr, and = 100 mA - 8 Ohm
 3I101I at Iobr, and = 100 mA - 7 Ohm
The total capacity of the diode at the point of minimum volt-ampere characteristic at f = 1? 10 MHz:
 3I101A, 3I101Ye, maximum - 3 pF
 AI101A, maximum - 4 pF
 3I101B - from 2 to 6 pF
 AI101B - from 2 to 8 pF
 3I101V, not more than - 2 pF
 AI101V, not more than - 5 pF
 3I101G - from 1 to 3.7 pF
 3I101D - from 2.5 to 6 pF
 AI101D - from 2.5 to 10 pF
 3I101Zh - from 2 to 6 pF
 AI101Ye, maximum - 8 pF
 3I101I - from 4.5 to 10 pF
 AI101I - from 4.5 to
Direct DC voltage:
 3I101A, 3I101B, 3I101V, 3I101G, 3I101D, 3I101E, 3I101Zh, 3I101I at a temperature from 213 to 373 To - 0.35 V
 AI101A, AI101B, AI101V, AI101D, AI101Ye, AI101Zh, AI101I at temperature from 213 to 358 K - 0.5-0.6 V
Ambient temperature:
 3I101A, 3I101B, 3I101V, 3I101G, 3I101D, 3I101E, 3I101Zh, 3I101I at a temperature from 213 to 373 To - from 213 to
373 K
 AI101A, AI101B, AI101V, AI101D, AI101Ye, AI101Zh, AI101I at temperature from 213 to 358 K - from 213 to 358 K
Notes:
1. When attaching devices in clamps, it is allowed to cut tape leads without
application of mechanical load to the instrument housing. Pressure on the device cover, perpendicular to its
planes, must be not more than 15 N.
2. Diode verification by tester is not allowed.
3. Operation of diodes on the first ascending branch and on the section of negative resistance of voltamper characteristic is allowed.