3I306J ◊☆40pcs☆(3И306Ж) Ga-As Tunnel Diodes

Description

1LO
Т
=40 PIECES
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Diode weight is not more than 0.15 g.
Some electrical parameters:
Peak current:
At T = 25 C:
- 3И306Г, 3И306Е 1.8-2.2 mA
- 3И306Ж, 3И306К, 3И306Р 4.5-5.5 mA
- 3И306Л, 3И306М, 3И306Н, 3И306С 9-11 mA
At T=100 C:
- 3И306Г, 3И306Е 1.5-2.4 mA
- 3И306Ж, 3И306К, 3И306Р 3.9-5.9 mA
- 3И306Л, 3И306М, 3И306Н, 3И306С 7.7-11.8 mA
At T=-60 S:
- 3И306Г, 3И306Е 1.5-2.4 mA
- 3И306Ж, 3И306К, 3И306Р 3.8-5.9 mA
- 3И306Л, 3И306М, 3И306Н, 3И306С 7.6-11.8 mA
Ratio of peak current to trough current, not less than:
- At T=25 C 8
- At T=100 C 6
Peak voltage is not more than:
- At T=25 C of 0.17 V
- At T=100 C of 0.2 V
Total capacity at the point of minimum volt-ampere characteristic at f = 1-10 MHz:
- 3И306Г, not more than 8 pF
- 3И306Е 4-12 pF
- 3И306Ж, not more than 15 pF
- 3И306К 8-25 pF
- 3И306Л, not more than 12 pF
- 3И306М, not more than 30 pF
- 3И306Н 15-50 pF
- 3И306Р 4-25 pF
- 3И306С 10-50 pF
Limit operating data:
Direct direct current:
In pulse switching mode:
At T=-60-+25 C
- 3I306G, 3I306Zh, 3I306L, 3I306M 0.4 Ip
- 3I306Ye, 3I306K, 3I306R, 3I306N, 3I306S 1.2 Ip
At T=+100 C
- 3I306G, 3I306Zh, 3I306L, 3I306M 0.3 Ip
- 3I306Ye, 3I306K, 3I306R, 3I306N, 3I306S 0.8 Ip
In constant mode:
At T=-60-+25 C
- 3I306G, 3I306Zh, 3I306L, 3I306M 0.4 Ip
- 3I306Ye, 3I306K, 3I306R, 3I306N, 3I306S 0.9 Ip
At T=+100 C
- 3I306G, 3I306Zh, 3I306L, 3I306M 0.15 Ip
- 3I306Ye, 3I306K, 3I306R, 3I306N, 3I306S 0.5 Ip
DC reverse current:
- 3I306G, 3I306Ye 4 mA
- 3I306Zh, 3I306K, 3I306R 10 mA
- 3I306L, 3I306M, 3I306N, 3I306S 20 mA
Ambient temperature -60- + 100 С